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Journal of Computational and Theoretical Nanoscience

Volumn 10, Issue 9, 2013, Pages 2066-2070

Electronic properties of GaN Nanotube: Ab initio study

(3) Khaddeo, Kavita Rao a,b Srivastava, Anurag a Kurchania, Rajnish b

a ABV INDIAN INSTITUTE OF INFORMATION TECHNOLOGY AND MANAGEMENT (India)

b MAULANA AZAD NATIONAL INSTITUTE OF TECHNOLOGY (India)

Author keywords

Ab Initio; Band Structure; Buckling; Electronic Properties; Zigzag GaNNT

Indexed keywords

AB INITIO; AB INITIO STUDY; EXCHANGE-CORRELATION FUNCTIONALS; GAN NANOTUBES; INTERLAYER INTERACTIONS; METALLIC BEHAVIORS; TUBE DIAMETERS; ZIGZAG GANNT;

ATOMS; BAND STRUCTURE; BUCKLING; ENERGY GAP; GALLIUM NITRIDE; NANOTUBES; TUBES (COMPONENTS);

ELECTRONIC PROPERTIES;

EID: 84886458729 PISSN: 15461955 EISSN: 15461963 Source Type: Journal
DOI: 10.1166/jctn.2013.3169 Document Type: Article

Times cited : (18)

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