Pattern density multiplication by direct self assembly of block copolymers: Toward 300mm CMOS requirements

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8323, Issue , 2012, Pages

  Tiron, R ^a   Chevalier, X ^b   Gaugiran, S ^a   Pradelles, J ^a   Fontaine, H ^a   Couderc, C ^a   Pain, L ^a   Navarro, C ^b   Chevolleau, T ^a   Cunge, G ^a   Delalande, M ^a   Fleury, G ^c   Hadziioannou, G ^c  

^a CEA LETI   (France)

^b ARKEMA   (France)

^c UNIVERSITÉ BORDEAUX 1   (France)

Author keywords

block copolymer; directed self assembly; graphoepitaxy; plasma etching; PS b PMMA

Indexed keywords

LITHOGRAPHY; OPTIMIZATION; PLASMA ETCHING; SELF ASSEMBLY;

BLOCK COPOLYMER SELF-ASSEMBLY; DIRECTED SELF-ASSEMBLY; E-BEAM LITHOGRAPHY; GRAPHOEPITAXY; LITHOGRAPHY PROCESS; PS-B-PMMA; SELF-ASSEMBLED ARRAYS; TRANSFER CAPABILITY;

BLOCK COPOLYMERS;

EID: 84886365545     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.916400     Document Type: Conference Paper

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