Low-temperature growth of near-infrared luminescent Bi-doped SiO xNy thin films

Optics Letters

Volumn 38, Issue 20, 2013, Pages 4224-4227

  Fujii, Minoru ^a   Morimoto, Satoshi ^a   Kitano, Shohei ^a   Imakita, Kenji ^a   Qiu, Jianrong ^b   Sun, Hong Tao ^c  

^a KOBE UNIVERSITY   (Japan)

^b SOUTH CHINA UNIVERSITY OF TECHNOLOGY   (China)

^c SOOCHOW UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; EFFECT OF ANNEALING; LOW TEMPERATURE GROWTH; LUMINESCENCE EFFICIENCIES; NEAR-INFRARED RANGE; PHOTOLUMINESCENCE PROPERTIES; SILICONOXYNITRIDE; SPUTTERING METHODS;

LUMINESCENCE; THIN FILMS;

INFRARED DEVICES;

EID: 84886004074     PISSN: 01469592     EISSN: 15394794     Source Type: Journal    
DOI: 10.1364/OL.38.004224     Document Type: Article

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