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Volumn 36, Issue 21, 2011, Pages 4221-4223

Sensitized broadband near-infrared luminescence from bismuth-doped silicon-rich silica films

(8) Miwa, Yuji a Sun, Hong Tao b Imakita, Kenji a Fujii, Minoru a Teng, Yu c Qiu, Jianrong d Sakka, Yoshio b Hayashi, Shinji a

a KOBE UNIVERSITY (Japan)

b NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

c ZHEJIANG UNIVERSITY (China)

d SOUTH CHINA UNIVERSITY OF TECHNOLOGY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; BI-DOPED; BISMUTH-DOPED; CO-SPUTTERING METHOD; ENERGY DONORS; EXCESS SI; INTEGRATED DEVICE; LUMINESCENCE PROPERTIES; NEAR INFRARED LUMINESCENCE; NEAR-IR; NIR-LUMINESCENCE; OPTICAL TELECOMMUNICATION; PURE SILICA; SI PHOTONICS; SI-BASED; SILICA FILM; SILICA OPTICAL FIBERS; TRANSFER EXCITATION; ULTRA-BROADBAND;

BISMUTH; INFRARED DEVICES; OPTICAL FIBERS; PHOTOLUMINESCENCE; SILICA; TELECOMMUNICATION SYSTEMS;

SILICON;

EID: 80455129920 PISSN: 01469592 EISSN: 15394794 Source Type: Journal
DOI: 10.1364/OL.36.004221 Document Type: Article

Times cited : (16)

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