Sensitized superbroadband near-IR emission in bismuth glass/Si nanocrystal superlattices

Optics Letters

Volumn 35, Issue 13, 2010, Pages 2215-2217

  Sun, Hong Tao ^a,b   Shimaoka, Fumiaki ^a   Miwa, Yuji ^a   Ruan, Jian ^c   Fujii, Minoru ^a   Qiu, Jianrong ^d   Hayashi, Shinji ^a  

^a KOBE UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c SHANGHAI INSTITUTE OF OPTICS AND FINE MECHANICS   (China)

^d ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE CENTER; BROAD APPLICATION; DIRECT TRANSITION; ENHANCED EMISSION; EXCITATION WAVELENGTH; NEAR-IR; NIR EMISSION; ORDER OF MAGNITUDE; SI NANOCRYSTAL; SUPERBROADBAND; TUNABLE LASER SOURCES;

BROADBAND AMPLIFIERS; ENERGY TRANSFER; INFRARED DEVICES; LASERS; NANOCRYSTALS; SUPERLATTICES;

BISMUTH;

EID: 77954993404     PISSN: 01469592     EISSN: 15394794     Source Type: Journal    
DOI: 10.1364/OL.35.002215     Document Type: Article

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