Excitation wavelength-dependent near-infrared luminescence from Bi-doped silica glass

Journal of Alloys and Compounds

Volumn 531, Issue , 2012, Pages 10-13

  Zhang, Liaolin ^a   Dong, Guoping ^a   Wu, Jingdong ^b,c   Peng, Mingying ^a   Qiu, Jianrong ^a  

^a SOUTH CHINA UNIVERSITY OF TECHNOLOGY   (China)

^b ZHEJIANG UNIVERSITY   (China)

^c Zhejiang Futong Optical Fiber Technology Corp Ltd   (China)

Author keywords

Bi; Luminescent center; Wavelength dependent luminescence

Indexed keywords

ACTIVE CENTER; BI-DOPED; CHEMICAL VAPOR; EMISSION BANDS; EXCITATION WAVELENGTH; LUMINESCENT CENTERS; NEAR INFRARED LUMINESCENCE; NIR EMISSION; PEAK POSITION;

BISMUTH; CHEMICAL VAPOR DEPOSITION; INFRARED DEVICES;

LUMINESCENCE;

EID: 84860282807     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2012.03.101     Document Type: Article

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