Broadband near-infrared emission from bismuth-doped multilayer films

Journal of Applied Physics

Volumn 112, Issue 7, 2012, Pages

  Morimoto, Satoshi ^a   Fujii, Minoru ^a   Sun, Hong Tao ^b   Miwa, Yuji ^a   Imakita, Kenji ^a   Qiu, Jianrong ^c   Hayashi, Shinji ^a  

^a KOBE UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c SOUTH CHINA UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE CENTER; BI-DOPED; BISMUTH-DOPED; BULK GLASS; EMISSION BEHAVIOR; FILM STRUCTURE; HIGH TEMPERATURE; LOW TEMPERATURES; LUMINESCENCE PROPERTIES; MULTILAYER STRUCTURES; NEAR INFRARED; NEAR-INFRARED EMISSIONS; SILICA THIN FILMS;

BISMUTH; FILM PREPARATION; INFRARED DEVICES; MULTILAYER FILMS; SILICA;

SILICON;

EID: 84867522470     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4757579     Document Type: Article

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