메뉴 건너뛰기




Volumn 7, Issue 10, 2013, Pages 864-867

Radial composition of single InGaN nanowires: A combined study by EDX, Raman spectroscopy, and X-ray diffraction

Author keywords

Compound semiconductors; EDX; III nitride semiconductors; Nanowires; Raman spectroscopy; X ray diffraction

Indexed keywords

COMPOUND SEMICONDUCTORS; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; III-NITRIDE SEMICONDUCTORS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; RESONANT RAMAN SCATTERING; SPATIALLY RESOLVED X-RAY DIFFRACTIONS; SPONTANEOUS FORMATION; THREE DIFFERENT TECHNIQUES;

EID: 84885834345     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201307244     Document Type: Article
Times cited : (2)

References (16)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.