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Journal of Magnetism and Magnetic Materials

Volumn 323, Issue 2, 2011, Pages 198-201

Temperature and bias voltage dependence of Co/Pd multilayer-based magnetic tunnel junctions with perpendicular magnetic anisotropy

(6) Kugler, Zo a Drewello, Volker a Schfers, Markus a Schmalhorst, Jan a Reiss, Gnter a Thomas, Andy a

a BIELEFELD UNIVERSITY (Germany)

Author keywords

Magnetic tunnel junction; Perpendicular anisotropy; Spinelectronic

Indexed keywords

ANNEALING TEMPERATURES; BI-LAYER; BIAS VOLTAGE DEPENDENCE; CO/PD MULTILAYERS; IN-PLANE ANISOTROPY; LAYER THICKNESS; MAGNETIC TUNNEL JUNCTION; MAGNETIZATION MEASUREMENTS; MGO BARRIER; PERPENDICULAR ANISOTROPY; PERPENDICULAR MAGNETIC ANISOTROPY; ROOM TEMPERATURE; SPINELECTRONIC; SWITCHING FIELD; TRANSPORT MEASUREMENTS;

BIAS VOLTAGE; COBALT COMPOUNDS; ELECTRODES; MAGNETIC ANISOTROPY; MAGNETISM; MULTILAYERS; TUNNEL JUNCTIONS;

MAGNETIC DEVICES;

EID: 77958008225 PISSN: 03048853 EISSN: None Source Type: Journal
DOI: 10.1016/j.jmmm.2010.08.038 Document Type: Article

Times cited : (19)

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