Comparison of scaling of in-plane and perpendicular spin transfer switching technologies by micromagnetic simulation

IEEE Transactions on Magnetics

Volumn 46, Issue 6, 2010, Pages 2240-2243

  Apalkov, Dmytro ^a   Watts, Steven ^a   Driskill Smith, Alexander ^a   Chen, Eugene ^a   Diao, Zhitao ^a   Nikitin, Vladimir ^a  

^a Grandis Inc   (United States)

Author keywords

Magnetic tunneling junction; Spin transfer torque random access memory (STT RAM); Spintronics

Indexed keywords

ELECTRICAL ENGINEERING; MAGNETIC MATERIALS; SPINTRONICS;

MAGNETIC TUNNELING JUNCTIONS; MEMORY TECHNOLOGY; MICROMAGNETIC MODELING; MICROMAGNETIC SIMULATIONS; SPIN TRANSFER SWITCHING; SPIN TRANSFER TORQUE; SPIN TRANSFER TORQUE SWITCHING; SPIN-TRANSFER TORQUE RANDOM ACCESS MEMORY (STT-RAM);

RANDOM ACCESS STORAGE;

EID: 77952791735     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2010.2041330     Document Type: Article

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