Optimized growth of heteroepitaxial (111) NiFe2O4 thin films on (0001) sapphire with two in-plane variants via chemical solution deposition

Journal of the American Ceramic Society

Volumn 96, Issue 10, 2013, Pages 3050-3053

  Seifikar, Safoura ^a   Calandro, Bridget ^b   Rasic, Goran ^a   Deeb, Elisabeth ^c   Yang, Jijin ^d   Bassiri Gharb, Nazanin ^c,e   Schwartz, Justin ^a  

^a North Carolina State University   (United States)

^b University of Missouri Rolla   (United States)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^d CARL ZEISS SMT AG   (Germany)

^e Georgia Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CHEMICAL SOLUTION DEPOSITION; CHEMICAL SOLUTION DEPOSITION TECHNIQUES; EPITAXIAL RELATIONSHIPS; EPITAXIAL THIN FILMS; MICRO-STRUCTURAL; PROCESSING CONDITION; PYROLYSIS TEMPERATURE;

DEPOSITION; SAPPHIRE; SUBSTRATES; TEXTURES; THIN FILMS;

EPITAXIAL GROWTH;

EID: 84885578358     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/jace.12520     Document Type: Article

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