Structural properties of ultra-low density nanoholes for the generation of well-separated GaAs quantum dots

Journal of Crystal Growth

Volumn 378, Issue , 2013, Pages 442-445

  Sonnenberg, D ^a   Graf, A ^a   Paulava, V ^a   Hansen, W ^a   Heyn, Ch ^a  

^a UNIVERSITY OF HAMBURG   (Germany)

Author keywords

Atomic force microscopy; Molecular beam epitaxy; Nanostructures; Semiconducting III V materials

Indexed keywords

ALUMINUM GALLIUM ARSENIDE; ATOMIC FORCE MICROSCOPY; DROPS; EPITAXIAL GROWTH; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOSTRUCTURES; SEMICONDUCTING GALLIUM;

DROPLET DEPOSITION; DROPLET ETCHINGS; EXCITATION POWER; OPTICAL EMISSIONS; QUANTIZATION ENERGY; SEMI CONDUCTING III-V MATERIALS; SHELL STRUCTURE; ULTRA LOW DENSITY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84885419255     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.12.060     Document Type: Article

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