The electrical and structural properties of carbon nanotubes grown by microwave plasma-enhanced chemical vapor deposition method for organic thin film transistor

Thin Solid Films

Volumn 546, Issue , 2013, Pages 77-80

  Lee, Jae Hyeong ^a   Hong, Byungyou ^a   Park, Yong Seob ^b  

^a Sungkyunkwan University   (South Korea)

^b Chosun College of Science and Technology   (South Korea)

Author keywords

Carbon nanotube; Deposition; Microwave plasma enhanced chemical vapor; Raman; Sheet resistance; Substrate bias voltage

Indexed keywords

BIAS VOLTAGE; CHEMICAL VAPOR DEPOSITION; DEPOSITION; FIELD EFFECT TRANSISTORS; MAGNETRON SPUTTERING; MICROWAVES; NANOTUBES; NICKEL; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SHEET RESISTANCE; SILICON WAFERS; SUBSTRATES; THIN FILM CIRCUITS; THIN FILM TRANSISTORS; VAPOR DEPOSITION; YARN;

CHEMICAL VAPOR; ELECTRICAL AND STRUCTURAL PROPERTIES; MICROWAVE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITIONS; ORGANIC THIN FILM TRANSISTORS; RADIO FREQUENCY MAGNETRON SPUTTERING METHOD; RAMAN; STRUCTURAL AND ELECTRICAL PROPERTIES; SUBSTRATE BIAS VOLTAGES;

CARBON NANOTUBES;

EID: 84885331124     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2013.05.025     Document Type: Conference Paper

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