Growth of n-doped and p-doped GaAs nanowires by Au-assisted metalorganic chemical vapor deposition: Effect of dopants flux rates

Advanced Materials Research

Volumn 774-776, Issue , 2013, Pages 860-863

  Zhang, Peng ^a,b   Liu, Yan ^c   Guo, Jing Wei ^d   Zhang, Xiao Pin ^b  

^a Hebei Vocational and Technical College of Building Materials   (China)

^b BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^c YANSHAN UNIVERSITY   (China)

^d INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

GaAs; N doped; Nanowires; P doped

Indexed keywords

CRITICAL LENGTH; EFFECT OF DOPANTS; FLUX RATES; GAAS; GAAS NANOWIRES; N-DOPED; P-DOPED; VAPOR-LIQUID-SOLID MECHANISM;

GALLIUM ARSENIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOWIRES; PHOSPHORUS; SEMICONDUCTING GALLIUM; VAPORS;

DOPING (ADDITIVES);

EID: 84884924076     PISSN: 10226680     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/AMR.774-776.860     Document Type: Conference Paper

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