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Volumn 25, Issue 36, 2013, Pages 5098-5103

The memristive properties of a single VO2 nanowire with switching controlled by self-heating

Author keywords

memristor; metal to insulator transition; non volatile memory device; resistive switching device; vanadium dioxide nanowire

Indexed keywords

MEMRISTOR; METAL-TO-INSULATOR TRANSITIONS; NONVOLATILE MEMORY DEVICES; RESISTIVE SWITCHING DEVICES; VANADIUM DIOXIDE;

EID: 84884903890     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201302511     Document Type: Article
Times cited : (153)

References (35)
  • 7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.