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Volumn 34, Issue 10, 2013, Pages 1283-1285

Enhanced light extraction for InGaN/GaN LED using Zn and Mg driven-In ALD-GZO as transparent conducting layer

Author keywords

Atomic layer deposition (ALD); gallium doped ZnO (GZO); InGaN GaN; ultraviolet (UV) light emitting diodes (LEDs)

Indexed keywords

ELECTROLUMINESCENCE INTENSITY; GALLIUMDOPED ZINC OXIDES (GZO); INGAN/GAN; INGAN/GAN LIGHTEMITTING DIODES (LEDS); LIGHT OUTPUT POWER; RAPID THERMAL DIFFUSION; SHORTER WAVELENGTH; ZNO;

EID: 84884820377     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2278854     Document Type: Article
Times cited : (8)

References (10)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.