CW Source based on photomixing with output power reaching 1.8 mW at 250 GHz

IEEE Electron Device Letters

Volumn 34, Issue 10, 2013, Pages 1277-1279

  Peytavit, Emilien ^a   Latzel, Philipp ^a   Pavanello, Fabio ^a   Ducournau, Guillaume ^a   Lampin, Jean Francois ^a  

^a Institut d'Electronique   (France)

Author keywords

Microwave photonics; optoelectronic devices; submillimeter wave generation; terahertz devices

Indexed keywords

CONTINUOUS WAVE OUTPUT POWER; LOW-TEMPERATURE-GROWN GAAS; MICROWAVE PHOTONICS; OUTPUT POWER; PHOTOMIXERS; PHOTOMIXING; SUBMILLIMETER WAVE GENERATION; TERAHERTZ DEVICE;

ELECTRON DEVICES; ELECTRONICS ENGINEERING;

OPTOELECTRONIC DEVICES;

EID: 84884817987     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2277574     Document Type: Article

References (14)

1. A. T. Forrester, R. A. Gudmundsen, and P. O. Johnson, "Photoelectric mixing of incoherent light," Phys. Rev., vol. 99, no. 6, pp. 1691-1700, Sep. 1955.
2. P. D. Coleman, R. C. Eden, and J. N. Weaver, "Mixing and detection of coherent light," IEEE Trans. Electron Devices, vol. 11, no. 11, pp. 488-497, Nov. 1964.
3. E. Brown, K. McIntosh, K. Nichols, et al., "Photomixing up to 3.8 THz in low-temperature-grown GaAs," Appl. Phys. Lett., vol. 66, no. 3, pp. 285-287, Jan. 1995.
4. I. C. Mayorga, E. A. Michael, A. Schmitz, et al., "Terahertz photomixing in high energy oxygen-and nitrogen-ion-implanted GaAs," Appl. Phys. Lett., vol. 91, no. 3, pp. 031107-1-031107-3, Jul. 2007.
5. J. Mangeney, A. Merigault, N. Zerounian, et al., "Continuous wave terahertz generation up to 2 THz by photomixing on ion-irradiated In0.53Ga0.47As at 1.55 ?m wavelengths," Appl. Phys. Lett., vol. 91, no. 24, pp. 241102-1-241102-3, Dec. 2007.
6. J. E. Bjarnason, T. L. J. Chan, A. W. M. Lee, et al., "ErAs:GaAs photomixer with two-decade tunability and 12 ?W peak output power," Appl. Phys. Lett., vol. 85, no. 18, pp. 3983-3985, Sep. 2004.
7. H. Ito, T. Furuta, F. Nakajima, et al., "Photonic generation of continuous THz wave using uni-traveling-carrier photodiode," J. Lightw. Technol., vol. 23, no. 12, pp. 4016-4021, Dec. 2005. (Pubitemid 43137007)
8. E. Rouvalis, C. C. Renaud, D. G. Moodie, et al., "Continuous wave terahertz generation from ultra-fast InP-based photodiodes," IEEE Trans. Microw. Theory Tech., vol. 60, no. 3, pp. 509-517, Mar. 2012.
9. E. Peytavit, S. Lepilliet, F. Hindle, et al., "Milliwatt-level output power in the sub-terahertz range generated by photomixing in a GaAs photoconductor," Appl. Phys. Lett., vol. 99, no. 22, pp. 223508-1-223508-3, Nov. 2011.
10. E. Peytavit, J.-F. Lampin, F. Hindle, et al., "Wide-band continuous-wave terahertz source with a vertically integrated photomixer," Appl. Phys. Lett., vol. 95, no. 16, pp. 161102-1-161102-3, Oct. 2009.
11. E. Peytavit, C. Coinon, and J.-F. Lampin, "A metal-metal Fabry-Pérot cavity photoconductor for efficient GaAs terahertz photomixers," J. Appl. Phys., vol. 109, no. 1, pp. 016101-1-016101-3, Jan. 2011.
12. E. Peytavit, C. Coinon, and J.-F. Lampin, "Low-temperature-grown GaAs photoconductor with high dynamic responsivity in the millimeter wave range," Appl. Phys. Exp., vol. 4, pp. 104101-1-104101-3, Sep. 2011.
13. J. Farhoomand and R. E. McMurray, "Design parameters of a resonant infrared photoconductor with unity quantum efficiency," Appl. Phys. Lett., vol. 58, no. 6, pp. 622-624, Feb. 1991.
14. H.-J. Song, K. Ajito, Y. Muramoto, et al., "Uni-travelling-carrier photodiode module generating 300 GHz power greater than 1 mW," IEEE Microw. Wireless Compon. Lett., vol. 22, no. 7, pp. 363-365, Jul. 2012.