Continuous wave terahertz generation up to 2 THz by photomixing on ion-irradiated In0.53 Ga0.47 As at 1.55 μm wavelengths

Applied Physics Letters

Volumn 91, Issue 24, 2007, Pages

  Mangeney, J ^a   Merigault, A ^a   Zerounian, N ^a   Crozat, P ^a   Blary, K ^b   Lampin, J F ^b  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS VOLTAGE; ION BOMBARDMENT; MICROWAVE FREQUENCIES; PASSIVATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SILICON NITRIDE;

CONTINUOUS TERAHERTZ WAVES; OPTICAL WAVES; PHOTOMIXING;

ELECTROMAGNETIC WAVES;

EID: 37149029420     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2817607     Document Type: Article

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