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Applied Physics Letters

Volumn 99, Issue 22, 2011, Pages

Milliwatt-level output power in the sub-terahertz range generated by photomixing in a GaAs photoconductor

(8) Peytavit, E a Lepilliet, S a Hindle, F b Coinon, C a Akalin, T a Ducournau, G a Mouret, G b Lampin, J F a

a INSTITUT D ELECTRONIQUE (France)

b UNIVERSITÉ DU LITTORAL CÔTE D OPALE (France)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS-WAVE OUTPUT POWER; GAAS; LOW-TEMPERATURE-GROWN GAAS; METALLIC MIRRORS; ON-WAFER MEASUREMENTS; OUTPUT POWER; PHOTOMIXERS; PHOTOMIXING;

SEMICONDUCTING GALLIUM; TERAHERTZ WAVES;

GALLIUM ARSENIDE;

EID: 82955240982 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3664635 Document Type: Article

Times cited : (65)

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