Terahertz photomixing in high energy oxygen- and nitrogen-ion-implanted GaAs

Applied Physics Letters

Volumn 91, Issue 3, 2007, Pages

  Mayorga, I Cámara ^a   Michael, E A ^a   Schmitz, A ^a   Van Der Wal, P ^a   Gusten R ^a   Maier, K ^b   Dewald, A ^c  

^a MAX PLANCK INSTITUT FÜR RADIOASTRONOMIE   (Germany)

^b UNIVERSITY OF BONN   (Germany)

^c UNIVERSITY OF COLOGNE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANTENNAS; ELECTRIC VARIABLES MEASUREMENT; ION IMPLANTATION; PHOTOCURRENTS; SEMICONDUCTOR METAL BOUNDARIES;

BROADBAND ANTENNAS; METAL-SEMICONDUCTOR-METAL STRUCTURES; TERAHERTZ PHOTOMIXING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 34547190110     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2753738     Document Type: Article

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