Investigations on Ru-Mn films as plateable Cu diffusion barriers

2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011

Volumn , Issue , 2011, Pages

  Wojcik, Henry ^a   Kaltofen, Rainer ^c   Krien, Cornelia ^c   Merkel, Ulrich ^a   Wenzel, Christian ^a   Bartha, Johann W ^a   Friedemann, Michael ^d   Adolphi, Barbara ^a   Liske, Romy ^b   Neumann, Volker ^a   Geidel, Marion ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^b Fraunhofer Center Nanoelectronic Technologies   (Germany)

^c IFW DRESDEN   (Germany)

^d GLOBALFOUNDRIES   (Germany)

Author keywords

bias temperature stress; Cu adhesion; Cu diffusion barrier; direct Cu plating; oxygen diffusion barrier; Ru Mn

Indexed keywords

BIAS TEMPERATURE STRESS; CU DIFFUSION BARRIER; DIRECT CU PLATING; OXYGEN DIFFUSION BARRIER; RU-MN;

ADHESION; COPPER; DIFFUSION IN GASES; ELECTROMIGRATION; FILMS; GRAIN BOUNDARIES; INVESTMENTS; MANGANESE; METALLIZING; OXYGEN; RUTHENIUM ALLOYS; SILICON COMPOUNDS;

DIFFUSION BARRIERS;

EID: 80052077142     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2011.5940262     Document Type: Conference Paper

References (4)

1. H. Wojcik et al., "Electrical Evaluation of Ru-W(-N), Ru-Ta(-N) and Ru-Mn films as Cu diffusion barriers", Proc. AMC 2010, submitted to MEE.
2. Koike et al., Journal of Applied Physics, USA vol 102 (15 Aug. 2007), no 4, p. 043527-1-7.
3. Usui et al., IEEE Transactions on electron devices, Vol. 53, No. 10, p. 2492-98, October 2006.
4. J. Gambino, IPFA 2010, available via IEEExplore