Cu alloy and Cu bilayer adhesion studies on PEALD Ta-C-N using Al, Ag, Ru and Ta

Advanced Metallization Conference (AMC)

Volumn , Issue , 2009, Pages 373-379

  Wojcik, Henry ^a   Strehle, Steffen ^a   Knaut, Martin ^a   Kaltofen, Rainer ^b   Merkel, Ulrich ^a   Pletea, Mirela ^b   Jian, He ^a   Fiering, Irina ^b   Wenzel, Christian ^a   Hiemann, Heidrun ^a   Bartha, Johann W ^a   Preusse, Axel ^c  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^b IFW DRESDEN   (Germany)

^c IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION LAYER; ADHESION STUDIES; AFM; BEFORE AND AFTER; BI-LAYER; BI-LAYER STRUCTURE; CU ALLOY; CU SURFACES; IN-SITU; SEM;

ADHESION; AGGLOMERATION; ALLOYING ELEMENTS; ALUMINUM; DIFFUSION BARRIERS; ELECTRIC RESISTANCE; METALLIZING; RUTHENIUM ALLOYS; SILVER; SILVER ALLOYS; SURFACE TOPOGRAPHY; TANTALUM;

COPPER ALLOYS;

EID: 70349941049     PISSN: 15401766     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

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2. W. F.A. Besling , X. Federspiel, T. Vanypre, J. Torres: Microelectronic Engineering 82 (2005) 254-260.
3. Vanypre-T; Cordeau-M; Mourier-T; Besling-W-F-A; Dupuy-J-C; Torres-J: Microelectronic Engineering 83 (2006) 2373-2376.
4. Zhao, H. Kim and Y. Shimogaki: Japanese Journal of Applied Physics Vol. 44, No. 41, 2005, pp. L 1278-L