Electrical Evaluation of Ru-W(-N), Ru-Ta(-N) and Ru-Mn films as Cu diffusion barriers

Microelectronic Engineering

Volumn 92, Issue , 2012, Pages 71-75

  Wojcik, H ^a   Kaltofen, R ^b   Merkel, U ^a   Krien, C ^b   Strehle, S ^a   Gluch, J ^b   Knaut, M ^a   Wenzel, C ^a   Preusse, A ^c   Bartha, J W ^a   Geidel, M ^a   Adolphi, B ^a   Neumann, V ^a   Liske, R ^d   Munnik, F ^e  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^b IFW DRESDEN   (Germany)

^c GLOBALFOUNDRIES   (Germany)

^d Fraunhofer Center Nanoelectronic Technologies   (Germany)

^e INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Bias temperature stress; Cu diffusion barrier; Ru composites; Triangular voltage sweep

Indexed keywords

BARRIER PERFORMANCE; BARRIER PROPERTIES; BIAS TEMPERATURE STRESS; CU DIFFUSION; CU DIFFUSION BARRIER; CU IONS; ELECTRICAL EVALUATIONS; ELECTRICAL FIELD; ELEVATED TEMPERATURE; FORMING GAS; RU FILM; TEST STRUCTURE; TRIANGULAR VOLTAGE SWEEP; VOLTAGE SWEEP;

ADHESION; COBALT; DIFFUSION BARRIERS; ELECTRIC PROPERTIES; MANGANESE; STOICHIOMETRY; TANTALUM COMPOUNDS;

COPPER;

EID: 84858284373     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.03.165     Document Type: Conference Paper

References (12)

1. R. Chan, T.N. Arunagiri, Y. Zhang, O. Chyan, R.M. Wallace, M.J. Kim, and T.Q. Hurdc Electrochem. Solid-State Lett. 7 2004 G154
2. M. Damayanti Electrochem. Solid-State Lett. 10 6 2007 P15 P17
3. T. Nogami, et al., Proc. of Advanced Metallization Conference 2008 (AMC 2008), San Diego del Mar (CA), ISBN 978-1-60511-125-4, pp. 139-145.
4. Chun-Wei Chen, et al., J. Electrochem. Soc. 155 (6) (2008) H438-H442.
5. K. Mori Proc. IITC 2008 99 101
6. K. Greenslit J. Vac. Sci. Technol. 27 2 2009
7. J. Koike J. Appl. Phys. 102 4 2007 0435271 0435277
8. T. Usui IEEE Trans. Electron Devices 53 10 2006 2492 2498
9. Z. Tokei Microelectron. Eng. 87 2010 348 354
10. S. Armini Microelectron. Eng. 88 5 2011 754 759
11. Nicollian Brews: MOS physics and Technology 2003 Wiley
12. S. Kumar J. Vac. Sci. Technol. A 27 3 2009 572 576