Tunable band gap of AlN, GaN nanoribbons and AlN/GaN nanoribbon heterojunctions: A first-principle study

Solid State Communications

Volumn 172, Issue , 2013, Pages 24-28

  Chen, Qian ^a   Song, Rui ^b   Chen, Changhua ^a   Chen, Xiaojie ^a  

^a SOUTHEAST UNIVERSITY   (China)

^b PLA UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

A. Semiconductors; D. Band gap; E. First principles

Indexed keywords

ALN; ALN/GAN; DIRECT BAND GAP SEMICONDUCTORS; E. FIRST PRINCIPLES; FIRST PRINCIPLE CALCULATIONS; FIRST-PRINCIPLE STUDY; FLEXIBLE TUNABILITY; TUNABLE BAND-GAP;

ELECTRONIC STRUCTURE; GALLIUM NITRIDE; HETEROJUNCTIONS; NANORIBBONS; OPTOELECTRONIC DEVICES;

ENERGY GAP;

EID: 84884648109     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2013.08.026     Document Type: Article

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