-
1
-
-
12844249479
-
Metal/organic/metal bistable memory devices
-
DOI 10.1063/1.1829166
-
D. Tondelier, K. Kmimouni, D. Vuillaume, C. Fery, and G. Hass, Appl. Phys. Lett. 0003-6951 85, 5763 (2004). 10.1063/1.1829166 (Pubitemid 40162586)
-
(2004)
Applied Physics Letters
, vol.85
, Issue.23
, pp. 5763-5765
-
-
Tondelier, D.1
Lmimouni, K.2
Vuillaume, D.3
Fery, C.4
Haas, G.5
-
2
-
-
33748960123
-
2O nanocrystals embedded in a polyimide layer
-
DOI 10.1063/1.2355465
-
J. H. Jung, J. H. Kim, T. W. Kim, M. S. Song, Y. H. Kim, and S. Jin, Appl. Phys. Lett. 0003-6951 89, 122110 (2006). 10.1063/1.2355465 (Pubitemid 44439792)
-
(2006)
Applied Physics Letters
, vol.89
, Issue.12
, pp. 122110
-
-
Jung, J.H.1
Kim, J.-H.2
Kim, T.W.3
Song, M.S.4
Kim, Y.-H.5
Jin, S.6
-
3
-
-
46349084322
-
-
1533-4880,. 10.1166/jnn.2007.896
-
B. Pradhan, S. K. Majee, S. K. Batabyal, and A. J. Pal, J. Nanosci. Nanotechnol. 1533-4880 7, 4534 (2007). 10.1166/jnn.2007.896
-
(2007)
J. Nanosci. Nanotechnol.
, vol.7
, pp. 4534
-
-
Pradhan, B.1
Majee, S.K.2
Batabyal, S.K.3
Pal, A.J.4
-
4
-
-
34848815673
-
Conductance switching in an organic material: From bulk to monolayer
-
DOI 10.1021/la701132f
-
A. K. Rath and A. J. Pal, Langmuir 0743-7463 23, 9831 (2007). 10.1021/la701132f (Pubitemid 47508011)
-
(2007)
Langmuir
, vol.23
, Issue.19
, pp. 9831-9835
-
-
Rath, A.K.1
Pal, A.J.2
-
5
-
-
79956022305
-
Organic bistable light-emitting devices
-
DOI 10.1063/1.1436274
-
L. Ma, J. Liu, S. Pyo, and Y. Yang, Appl. Phys. Lett. 0003-6951 80, 362 (2002). 10.1063/1.1436274 (Pubitemid 34105349)
-
(2002)
Applied Physics Letters
, vol.80
, Issue.3
, pp. 362
-
-
Ma, L.1
Liu, J.2
Pyo, S.3
Yang, Y.4
-
6
-
-
35548944891
-
Memory effect of nonvolatile bistable devices based on CdSeZnS nanoparticles sandwiched between C60 layers
-
DOI 10.1063/1.2801357
-
F. S. Li, D. Son, J. H. Ham, B. J. Kim, J. H. Jung, and T. W. Kim, Appl. Phys. Lett. 0003-6951 91, 162109 (2007). 10.1063/1.2801357 (Pubitemid 350004031)
-
(2007)
Applied Physics Letters
, vol.91
, Issue.16
, pp. 162109
-
-
Li, F.1
Son, D.-I.2
Ham, J.-H.3
Kim, B.-J.4
Jung, J.H.5
Kim, T.W.6
-
7
-
-
33744485608
-
Electrical switching and bistability in organic/polymeric thin films and memory devices
-
DOI 10.1002/adfm.200500429
-
Y. Yang, J. Y. Ouyang, L. P. Ma, R. J.-H. Tseng, and C. W. Chu, Adv. Funct. Mater. 1616-301X 16, 1001 (2006). 10.1002/adfm.200500429 (Pubitemid 43803724)
-
(2006)
Advanced Functional Materials
, vol.16
, Issue.8
, pp. 1001-1014
-
-
Yang, Y.1
Ouyang, J.2
Ma, L.3
Tseng, R.J.-H.4
Chu, C.-W.5
-
8
-
-
33748866237
-
Polymer memory device based on conjugated polymer and gold nanoparticles
-
DOI 10.1063/1.2337252
-
A. Prakash, J. M. Ouyang, J. -L. Lin, and Y. Yang, J. Appl. Phys. 0021-8979 100, 054309 (2006). 10.1063/1.2337252 (Pubitemid 44422086)
-
(2006)
Journal of Applied Physics
, vol.100
, Issue.5
, pp. 054309
-
-
Prakash, A.1
Ouyang, J.2
Lin, J.-L.3
Yang, Y.4
-
9
-
-
54149107684
-
-
0003-6951,. 10.1063/1.3002281
-
P. Y. Lai and J. S. Chen, Appl. Phys. Lett. 0003-6951 93, 153305 (2008). 10.1063/1.3002281
-
(2008)
Appl. Phys. Lett.
, vol.93
, pp. 153305
-
-
Lai, P.Y.1
Chen, J.S.2
-
10
-
-
0037416568
-
-
0003-6951,. 10.1063/1.1556555
-
L. P. Ma, S. Pyo, J. Y. Ouyang, Q. F. Xu, and Y. Yang, Appl. Phys. Lett. 0003-6951 82, 1419 (2003). 10.1063/1.1556555
-
(2003)
Appl. Phys. Lett.
, vol.82
, pp. 1419
-
-
Ma, L.P.1
Pyo, S.2
Ouyang, J.Y.3
Xu, Q.F.4
Yang, Y.5
-
11
-
-
33845963055
-
Negative differential resistance and electrical bistability in nanocrystal organic memory devices
-
DOI 10.1063/1.2409366
-
C. -H. Tu, D. -L. Kwong, and Y. -S. Lai, Appl. Phys. Lett. 0003-6951 89, 252107 (2006). 10.1063/1.2409366 (Pubitemid 46035143)
-
(2006)
Applied Physics Letters
, vol.89
, Issue.25
, pp. 252107
-
-
Tu, C.-H.1
Kwong, D.-L.2
Lai, Y.-S.3
-
12
-
-
65449149801
-
-
0003-6951,. 10.1063/1.3123810
-
V. S. Reddy, S. Karak, and A. Dhar, Appl. Phys. Lett. 0003-6951 94, 173304 (2009). 10.1063/1.3123810
-
(2009)
Appl. Phys. Lett.
, vol.94
, pp. 173304
-
-
Reddy, V.S.1
Karak, S.2
Dhar, A.3
-
13
-
-
34948871121
-
Layer-by-layer assembly of capped CdSe nanoparticles: Electrical bistability and memory phenomenon
-
DOI 10.1063/1.2793617
-
S. Sahu, S. K. Majee, and A. J. Pal, Appl. Phys. Lett. 0003-6951 91, 143108 (2007). 10.1063/1.2793617 (Pubitemid 47531551)
-
(2007)
Applied Physics Letters
, vol.91
, Issue.14
, pp. 143108
-
-
Sahu, S.1
Majee, S.K.2
Pal, A.J.3
-
14
-
-
33749620727
-
Electrical bistability in electrostatic assemblies of CdSe nanoparticles
-
DOI 10.1021/jp0639795
-
K. Mohanta, S. K. Majee, S. K. Batabyal, and A. J. Pal, J. Phys. Chem. B 1089-5647 110, 18231 (2006). 10.1021/jp0639795 (Pubitemid 44547325)
-
(2006)
Journal of Physical Chemistry B
, vol.110
, Issue.37
, pp. 18231-18235
-
-
Mohanta, K.1
Majee, S.K.2
Batabyal, S.K.3
Pal, A.J.4
-
15
-
-
65549170498
-
-
0957-4484,. 10.1088/0957-4484/20/19/195203
-
D. -I. Son, D. -H. Park, W. K. Choi, S. -H. Cho, W. -T. Kim, and T. W. Kim, Nanotechnology 0957-4484 20, 195203 (2009). 10.1088/0957-4484/20/19/195203
-
(2009)
Nanotechnology
, vol.20
, pp. 195203
-
-
Son, D.-I.1
Park, D.-H.2
Choi, W.K.3
Cho, S.-H.4
Kim, W.-T.5
Kim, T.W.6
-
16
-
-
34249915496
-
Memory effect of CdSeZnS nanoparticles embedded in a conducting poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene-vinylene] polymer layer
-
DOI 10.1063/1.2745219
-
F. S. Li, D-I. Son, H-M. Cha, S-M. Seo, B-J. Kim, H-J. Kim, J-H. Jung, and T. W. Kim, Appl. Phys. Lett. 0003-6951 90, 222109 (2007). 10.1063/1.2745219 (Pubitemid 46872627)
-
(2007)
Applied Physics Letters
, vol.90
, Issue.22
, pp. 222109
-
-
Li, F.1
Son, D.-I.2
Cha, H.-M.3
Seo, S.-M.4
Kim, B.-J.5
Kim, H.-J.6
Jung, J.-H.7
Kim, T.W.8
-
17
-
-
40849089262
-
-
0003-6951,. 10.1063/1.2898163
-
F. S. Li, S. H. Cho, D. I. Son, K. H. Park, and T. W. Kim, Appl. Phys. Lett. 0003-6951 92, 102110 (2008). 10.1063/1.2898163
-
(2008)
Appl. Phys. Lett.
, vol.92
, pp. 102110
-
-
Li, F.S.1
Cho, S.H.2
Son, D.I.3
Park, K.H.4
Kim, T.W.5
-
18
-
-
70349950981
-
-
JCPDS Card. No. 09-0328.
-
JCPDS Card. No. 09-0328.
-
-
-
-
19
-
-
42649137256
-
Synthesis of Cu-In-S ternary nanocrystals with tunable structure and composition
-
DOI 10.1021/ja711027j
-
D. C. Pan, L. J. An, Z. M. Sun, W. Hou, Y. Yang, Z. Z. Yang, and Y. F. Lu, J. Am. Chem. Soc. 0002-7863 130, 5620 (2008). 10.1021/ja711027j (Pubitemid 351600473)
-
(2008)
Journal of the American Chemical Society
, vol.130
, Issue.17
, pp. 5620-5621
-
-
Pan, D.1
An, L.2
Sun, Z.3
Hou, W.4
Yang, Y.5
Yang, Z.6
Lu, Y.7
-
20
-
-
38049066949
-
-
0003-6951,. 10.1063/1.2830617
-
F. S. Li, T. W. Kim, W. G. Dong, and Y. -H. Kim, Appl. Phys. Lett. 0003-6951 92, 011906 (2008). 10.1063/1.2830617
-
(2008)
Appl. Phys. Lett.
, vol.92
, pp. 011906
-
-
Li, F.S.1
Kim, T.W.2
Dong, W.G.3
Kim, Y.-H.4
-
21
-
-
33645509902
-
-
0003-6951,. 10.1063/1.2187407
-
R. J. Tseng, J. Y. Ouyang, C. W. Chu, J. S. Huang, and Y. Yang, Appl. Phys. Lett. 0003-6951 88, 123506 (2006). 10.1063/1.2187407
-
(2006)
Appl. Phys. Lett.
, vol.88
, pp. 123506
-
-
Tseng, R.J.1
Ouyang, J.Y.2
Chu, C.W.3
Huang, J.S.4
Yang, Y.5
-
22
-
-
33749045228
-
Negative differential resistance and multilevel memory effects in organic devices
-
DOI 10.1088/0268-1242/21/8/024, PII S0268124206212549, 024
-
J. S. Chen, L. L. Xu, J. Lin, Y. H. Geng, L. X. Wang, and D. G. Ma, Semicond. Sci. Technol. 0268-1242 21, 1121 (2006). 10.1088/0268-1242/21/8/024 (Pubitemid 44458357)
-
(2006)
Semiconductor Science and Technology
, vol.21
, Issue.8
, pp. 1121-1124
-
-
Chen, J.1
Xu, L.2
Lin, J.3
Geng, Y.4
Wang, L.5
Ma, D.6
-
23
-
-
33847352851
-
Electrically bistable thin-film device based on PVK and GNPs polymer material
-
DOI 10.1109/LED.2006.889519
-
Y. Song, Q. D. Ling, S. L. Lim, E. Y. H. Teo, Y. P. Tan, L. Li, and E. T. Kang, IEEE Electron Device Lett. 0741-3106 28, 107 (2007). 10.1109/LED.2006. 889519 (Pubitemid 46336435)
-
(2007)
IEEE Electron Device Letters
, vol.28
, Issue.2
, pp. 107-110
-
-
Song, Y.1
Ling, Q.D.2
Lim, S.L.3
Teo, E.Y.H.4
Tan, Y.P.5
Li, L.6
Kang, E.T.7
Chan, D.S.H.8
Zhu, C.9
|