Pressure-induced amorphization in single-crystal Ta2O 5 nanowires: A kinetic mechanism and improved electrical conductivity

Journal of the American Chemical Society

Volumn 135, Issue 37, 2013, Pages 13947-13953

  Lü, Xujie ^a,b   Hu, Qingyang ^c   Yang, Wenge ^b   Bai, Ligang ^a   Sheng, Howard ^c   Wang, Lin ^b   Huang, Fuqiang ^d   Wen, Jianguo ^e   Miller, Dean J ^e   Zhao, Yusheng ^a  

^a UNIVERSITY OF NEVADA   (United States)

^b High Pressure Synergetic Consortium   (United States)

^c GEORGE MASON UNIVERSITY   (United States)

^d SHANGHAI INSTITUTE OF CERAMICS   (China)

^e ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CONDUCTIVITY; ELECTRON LOCALIZATION FUNCTION; FIRST-PRINCIPLES CALCULATION; IN-SITU SYNCHROTRONS; ONE-DIMENSIONAL MORPHOLOGIES; PAIR DISTRIBUTION FUNCTIONS; PRESSURE-INDUCED AMORPHIZATION; STRUCTURAL EVOLUTION;

AMORPHIZATION; NANOWIRES; TANTALUM OXIDES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

ELECTRIC CONDUCTIVITY OF SOLIDS;

NANOMATERIAL; NANOWIRE;

ARTICLE; CHEMICAL REACTION; COMPRESSION; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRON; KINETICS; PHASE TRANSITION; PHONON; PRESSURE; PRESSURE INDUCED AMORPHIZATION; RAMAN SPECTROMETRY; SCANNING ELECTRON MICROSCOPY; SYNCHROTRON; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

EID: 84884474918     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/ja407108u     Document Type: Article

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