Structural and elastic properties of defect chalcopyrite HgGa 2S4 under high pressure

Journal of Alloys and Compounds

Volumn 583, Issue , 2014, Pages 70-78

  Gomis, O ^a   Santamaria Perez D ^b,c   Vilaplana, R ^a   Luna, R ^a   Sans, J A ^a   Manjon F J ^a   Errandonea, D ^b   Perez Gonzalez E ^d   Rodriguez Hernandez P ^d   Munoz A ^d   Tiginyanu, I M ^e   Ursaki, V V ^e  

^a UNIVERSITAT POLITÈCNICA DE VALÈNCIA   (Spain)

^b UNIVERSITY OF VALENCIA   (Spain)

^c UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^d UNIVERSIDAD DE LA LAGUNA   (Spain)

^e INSTITUTE OF APPLIED PHYSICS   (Moldova)

Author keywords

Elasticity; Equation of state; High pressure; Mechanical properties; Semiconductors; X ray diffraction

Indexed keywords

AB INITIO TOTAL ENERGY; DEFECT CHALCOPYRITE STRUCTURE; DEFECT CHALCOPYRITES; DIAMOND-ANVIL CELL; EQUATION OF STATE; HIGH-PRESSURE; PRESSURE DEPENDENCE; X-RAY DIFFRACTION MEASUREMENTS;

CALCULATIONS; COMPRESSIBILITY; DEFECTS; EQUATIONS OF STATE; HIGH PRESSURE ENGINEERING; MECHANICAL PROPERTIES; SEMICONDUCTOR MATERIALS; X RAY DIFFRACTION;

ELASTICITY;

EID: 84884298144     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2013.08.123     Document Type: Article

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