Electronic structure of HgGa2S4

Solid State Communications

Volumn 138, Issue 5, 2006, Pages 250-254

  Atuchin, V V ^a   Kesler, V G ^b   Ursaki, V V ^c   Tezlevan, V E ^c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^c INSTITUTE OF APPLIED PHYSICS   (Moldova)

Author keywords

A. Semiconductors; D. Electronic band structure; E. Photoelectron spectroscopies

Indexed keywords

BAND STRUCTURE; BINDING ENERGY; CHEMICAL BONDS; ELECTRONIC STRUCTURE; MEASUREMENT THEORY; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSIVE DEVICES; SEMICONDUCTOR MATERIALS; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRONIC BAND STRUCTURES; PHOTOEMISSION SPECTRUM; VALENCE BAND SPECTRUM; VAPOR TRANSPORT METHOD;

MERCURY COMPOUNDS;

EID: 33748684783     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2006.02.026     Document Type: Article

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