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Journal of Physics and Chemistry of Solids

Volumn 63, Issue 10, 2002, Pages 1823-1828

Excitation and temperature tuned photoluminescence in HgGa2S4 single crystals

(6) Ursaki, V V a Ricci, P C b Tiginyanu, I M c Anedda, A b Syrbu, N N c Tezlevan, V E c

a INSTITUTE OF APPLIED PHYSICS (Moldova)

b INFM (Italy)

c TECHNICAL UNIVERSITY OF MOLDOVA (Moldova)

Author keywords

A. Elements; A. Samiconductors; B. Crystal growth

Indexed keywords

CRYSTAL GROWTH; ELECTRON TRANSITIONS; ENERGY GAP; MERCURY COMPOUNDS; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS;

EXCITATION POWER DENSITY;

SINGLE CRYSTALS;

EID: 0036778141 PISSN: 00223697 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3697(02)00002-1 Document Type: Article

Times cited : (16)

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