Pressure-induced phase transition in defect Chalcopyrites HgAl2Se4 and CdAl2S4

Journal of Physics and Chemistry of Solids

Volumn 71, Issue 5, 2010, Pages 832-835

  Meenakshi, S ^a   Vijayakumar, V ^a   Eifler, A ^b   Hochheimer, H D ^c  

^a BHABHA ATOMIC RESEARCH CENTRE   (India)

^b Colorado State University ^*  (Germany)

^c Department of Environmental and Radiological Health Sciences   (United States)

Author keywords

A. Optical materials; A. Semiconductors; C. High Pressure; C. X ray diffraction

Indexed keywords

BULK MODULUS; C. HIGH PRESSURE; EQUATION OF STATE; HIGH PRESSURE; PRESSURE RELEASE; PRESSURE-INDUCED PHASE TRANSITION; ROCK-SALT STRUCTURE; TETRAGONAL PHASE; ZINCBLENDE STRUCTURES;

COPPER COMPOUNDS; DEFECTS; EQUATIONS OF STATE; HIGH PRESSURE ENGINEERING; OPTICAL MATERIALS; PHASE TRANSITIONS; SEMICONDUCTOR QUANTUM DOTS; X RAY DIFFRACTION; ZINC;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 77950338542     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2010.02.007     Document Type: Article

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