Raman scattering study of pressure-induced phase transitions in A IIB2IIIC4VI defect chalcopyrites and spinels

Journal of Physics and Chemistry of Solids

Volumn 64, Issue 9-10, 2003, Pages 1603-1607

  Tiginyanu, I M ^a,b   Ursaki, V V ^a   Manjon F J ^c   Tezlevan, V E ^a  

^a INSTITUTE OF APPLIED PHYSICS   (Moldova)

^b TECHNICAL UNIVERSITY OF MOLDOVA   (Moldova)

^c UNIVERSITAT POLITÈCNICA DE VALÈNCIA   (Spain)

Author keywords

A. Semiconductors; C. High pressure; D. Phase transitions

Indexed keywords

HIGH PRESSURE EFFECTS; HYDROSTATIC PRESSURE; PHASE TRANSITIONS; SEMICONDUCTOR MATERIALS;

SPINELS;

RAMAN SCATTERING;

EID: 0041736572     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3697(03)00098-2     Document Type: Conference Paper

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