Raman spectroscopy of self-catalyzed GaAs1-xSbx nanowires grown on silicon

Nanotechnology

Volumn 24, Issue 40, 2013, Pages

  Alarcón Lladó, Esther ^a   Conesa Boj, Sònia ^a   Wallart, Xavier ^b   Caroff, Philippe ^b,c   Fontcuberta I Morral, Anna ^a  

^a EPFL   (Switzerland)

^b INSTITUT D ELECTRONIQUE   (France)

^c AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY DISPERSIVE X-RAY; MATERIAL QUALITY; OPTICAL AND ELECTRONIC PROPERTIES; OPTICAL PHONONS; PLASMON COUPLING; SURFACE RECOMBINATIONS; SYSTEMATIC STUDY; VIBRATIONAL PROPERTIES;

ELECTRONIC PROPERTIES; GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM; SILICON; TERNARY ALLOYS; X RAY ANALYSIS;

NANOWIRES;

EID: 84884279094     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/40/405707     Document Type: Article

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