Low-resistivity p-type doping in wurtzite ZnS using codoping method

Advances in Condensed Matter Physics

Volumn 2013, Issue , 2013, Pages

  Li, Deng Feng ^a   Luo, Min ^a   Li, Bo Lin ^a   Wu, Cheng Bing ^a   Deng, Bo ^a   Dong, Hui Ning ^a  

^a CHONGQING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84884225892     PISSN: 16878108     EISSN: 16878124     Source Type: Journal    
DOI: 10.1155/2013/739078     Document Type: Article

References (17)

1. Wei S.-H., Overcoming the doping bottleneck in semiconductors. Computational Materials Science 2004 30 3-4 337 348 2-s2.0-3142697800 10.1016/j.commatsci.2004.02.024
2. Nakamura S., Yamaguchi J., Takagimoto S., Yamada Y., Taguchi T., Luminescence properties of lithium-doped ZnS epitaxial layers grown by MOCVD. Journal of Crystal Growth 2002 237-239 1-4 1570 1574 2-s2.0-0036531560 10.1016/S0022-0248(01)02380-6
3. Gai Y., Li J., Yao B., Xia J.-B., The bipolar doping of ZnS via native defects and external dopants. Journal of Applied Physics 2009 105 11 2-s2.0-67649566418 10.1063/1.3103585 113704
4. Yan Y., Li J., Wei S.-H., Al-Jassim M. M., Possible approach to overcome the doping asymmetry in wideband gap semiconductors. Physical Review Letters 2007 98 13 2-s2.0-34047120057 10.1103/PhysRevLett.98.135506 135506
5. Echendu O. K., Weerasinghe A. R., Diso D. G., Fauzi F., Dharmadasa I. M., Characterization of n-Type and p-Type ZnS Thin Layers Grown by an Electrochemical Method. Journal of Electronic Materials 2013 42 4 692 700
6. Gai Y., Li J., Li S.-S., Xia J.-B., Yan Y., Wei S.-H., Design of shallow acceptors in ZnO through compensated donor-acceptor complexes: a density functional calculation. Physical Review B 2009 80 15 2-s2.0-71449102316 10.1103/PhysRevB.80.153201 153201
7. Kumar M., Kim T.-H., Kim S.-S., Lee B.-T., Growth of epitaxial p-type ZnO thin films by codoping of Ga and N. Applied Physics Letters 2006 89 11 2-s2.0-33748709060 10.1063/1.2338527 112103
8. Svob L., Thiandoume C., Lusson A., Bouanani M., Marfaing Y., Gorochov O., p-type doping with N and Li acceptors of ZnS grown by metalorganic vapor phase epitaxy. Applied Physics Letters 2000 76 13 1695 1697 2-s2.0-0001680021
9. Yamamoto T., Kishimoto S., Iida S., Control of valence states for ZnS by triple-codoping method. Physica B 2001 308-310 916 919 2-s2.0-0035673002 10.1016/S0921-4526(01)00842-0
10. Yamamoto T., Kishimoto S., Iida S., Materials design for p-type ZnS with blue Ag emission by triple-codoping method. Physica Status Solidi 2002 229 1 371 375
11. Li S.-Z., Liu J.-C., Yang X.-D., Jiang D.-Q., First-principles study of Al, N codoped p-type ZnS. Chinese Journal of High Pressure Physics 2011 25 6 519 525 2-s2.0-84856350553
12. Ma X., Study of the P-type doping properties of ZnS nanocrystals. Journal of Nanomaterials 2011 2011 5 2-s2.0-77956791475 10.1155/2011/952616 952616
13. Kresse G., Joubert D., From ultrasoft pseudopotentials to the projector augmented-wave method. Physical Review B 1999 59 3 1758 1775 2-s2.0-0011236321
14. Perdew J. P., Yue W., Accurate and simple density functional for the electronic exchange energy: generalized gradient approximation. Physical Review B 1986 33 12 8800 8802 2-s2.0-18144378706 10.1103/PhysRevB.33.8800
15. Kresse G., Furthmüller J., Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set. Computational Materials Science 1996 6 1 15 50 2-s2.0-0030190741 10.1016/0927-0256(96)00008-0
16. Pack J. D., Monkhorst H. J., Special points for Brillouin-zone integrations. Physical Review B 1976 13 12 5188 5192 2-s2.0-1842816907 10.1103/PhysRevB.13.5188
17. Yan Y., Wei S.-H., Doping asymmetry in wide-bandgap semiconductors: origins and solutions. Physica Status Solidi 2008 245 4 641 652 2-s2.0-46049104283 10.1002/pssb.200743334