메뉴 건너뛰기




Volumn , Issue , 2009, Pages 103-109

Low power analog design in scaled technologies

Author keywords

[No Author keywords available]

Indexed keywords

ANALOG IC DESIGN; CHIP AREAS; DIGITAL PARTS; GATE OXIDE; POWER LEAKAGE; SCALED CMOS; SCALED TECHNOLOGIES; SUPPLY VOLTAGES;

EID: 84884177927     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (33)

References (14)
  • 1
    • 0000793139 scopus 로고
    • Cramming more components on to integrated circuits
    • April 19 Progress in digital integrated
    • G. E. Moore, "Cramming more components on to integrated circuits", Electronics, Vol. 38, no. 8, April 19, 1965; "Progress in digital integrated.
    • (1965) Electronics , vol.38 , Issue.8
    • Moore, G.E.1
  • 2
    • 84884174615 scopus 로고    scopus 로고
    • Editions
    • ITRS 2000, 2003, 2005 Editions.
    • (2003) ITRS 2000
  • 3
    • 0029487295 scopus 로고
    • A physicallly-based MOS transistor avalanche breakdown model
    • Dec.
    • Hei Wong, "A Physicallly-Based MOS Transistor Avalanche Breakdown Model", IEEE Trans. on electronics Devices, Dec. 1995, pp. 2197.
    • (1995) IEEE Trans. on Electronics Devices , pp. 2197
    • Hei, W.1
  • 4
    • 77951461669 scopus 로고    scopus 로고
    • Efficient subthreshold leakage current optimization-leakage
    • Sept.-Oct.
    • Qi, X.; et al. "Efficient subthreshold leakage current optimization-Leakage.", IEEE Circ. and Dev. Mag., Sept.-Oct. 2006, pp 39 - 47.
    • (2006) IEEE Circ. and Dev. Mag. , pp. 39-47
    • Qi, X.1
  • 5
    • 0742268981 scopus 로고    scopus 로고
    • Threshold voltage mismatch and intra-die leakage current in digital CMOS circuits
    • Jan.
    • Pineda de Gyvez, J. Tunihout, "Threshold Voltage Mismatch and Intra-Die Leakage Current in Digital CMOS Circuits", IEEE J. Solid-State Circuits, vol. 39, no. 12, pp. 157-168, Jan. 2004.
    • (2004) IEEE J. Solid-State Circuits , vol.39 , Issue.12 , pp. 157-168
    • De Gyvez, P.1    Tunihout, J.2
  • 6
    • 20144388181 scopus 로고    scopus 로고
    • RFCMOS technology from 0.25 μm to 65nm: The state of the art
    • J. Pekarik, et al., "RFCMOS Technology from 0.25 μm to 65nm: The State of the Art, CICC 2004
    • (2004) CICC
    • Pekarik, J.1
  • 8
    • 0030398050 scopus 로고    scopus 로고
    • A novel 0.25 pm shallow trench isolation technology
    • Dec. 1996
    • C. Chen, J. W. Chou, W. Lur, and S. W. Sun "A Novel 0.25 pm Shallow Trench Isolation Technology" Electron Devices Meeting, 1996, pp.837-840, Dec. 1996.
    • (1996) Electron Devices Meeting , pp. 837-840
    • Chen, C.1    Chou, J.W.2    Lur, W.3    Sun, S.W.4
  • 9
    • 0033325124 scopus 로고    scopus 로고
    • NMOS drive current reduction caused by transistor layout and trench isolation induced stress
    • IEDM technical digest. International, 5-8 Dec. 1999
    • G. Scott, et al., "NMOS drive current reduction caused by transistor layout and trench isolation induced stress", Electron Devices Meeting, 1999. IEDM Technical Digest. International, 5-8 Dec. 1999, pp. 827 - 830
    • (1999) Electron Devices Meeting , pp. 827-830
    • Scott, G.1
  • 10
    • 0032664038 scopus 로고    scopus 로고
    • A 1.5-V, 10-bit, 14.3-MS/s CMOS pipeline analog-to-digital converter
    • May
    • Andrew M. Abo and Paul R. Gray, "A 1.5-V, 10-bit, 14.3-MS/s CMOS Pipeline Analog-to-Digital Converter", IEEE J. Solid-State Circuits, May 1999.
    • (1999) IEEE J. Solid-State Circuits
    • Abo, A.M.1    Gray, P.R.2
  • 13
    • 58049103656 scopus 로고    scopus 로고
    • A 65-nm 84-dB-gain 200-MHz-UGB CMOS fully-differential three-stage amplifier with a novel common mode control
    • 15-19 Sept.
    • Ivonne Di Sancarlo, Dario Giotta, Andrea Baschirotto, Richard Gaggl "A 65-nm 84-dB-gain 200-MHz-UGB CMOS Fully-Differential Three-Stage Amplifier with a Novel Common Mode Control". ESSCIRC 2008 pp. 314 - 317, 15-19 Sept. 2008
    • (2008) ESSCIRC 2008 , pp. 314-317
    • Di Sancarlo, I.1    Giotta, D.2    Baschirotto, A.3    Gaggl, R.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.