Inhibition of Te surfactant effect on surface morphology of heavily Te-doped GaAs

Journal of Crystal Growth

Volumn 383, Issue , 2013, Pages 30-35

  Paquette, Bernard ^a   Ilahi, Bouraoui ^a   Aimez, Vincent ^a   Arès, Richard ^a  

^a UNIVERSITÉ DE SHERBROOKE   (Canada)

Author keywords

A1. Doping; A1. Morphological stability; A1. Surface structure; A3. Chemical beam epitaxy

Indexed keywords

ELECTRICAL ACTIVATION; GAAS; GROWTH PARAMETERS; INCORPORATION BEHAVIORS; KINETIC LIMITATIONS; MORPHOLOGICAL STABILITY; SURFACTANT EFFECTS; THREE-DIMENSIONAL GROWTH;

CHEMICAL BEAM EPITAXY; DOPING (ADDITIVES); EPITAXIAL GROWTH; GALLIUM ARSENIDE; GROWTH TEMPERATURE; SEMICONDUCTING GALLIUM; SURFACE ACTIVE AGENTS;

SURFACE MORPHOLOGY;

EID: 84884175864     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2013.08.015     Document Type: Article

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