Heavily Sn-doped GaAs with abrupt doping profiles grown by migration-enhanced epitaxy at low temperatures

Journal of Applied Physics

Volumn 100, Issue 5, 2006, Pages

  Chavanapranee, Tosaporn ^a   Horikoshi, Yoshiji ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTROMIGRATION; EPITAXIAL GROWTH; HALL EFFECT; LOW TEMPERATURE EFFECTS; RAMAN SCATTERING; SEMICONDUCTOR DOPING; TIN;

DOPING CONCENTRATIONS; DOPING PROFILES; GAAS FILMS; MIGRATION-ENHANCED EPITAXY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33748863729     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2338127     Document Type: Article

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