Performance comparison of AlGaAs, GaAs and InGaP tunnel junctions for concentrated multijunction solar cells

Progress in Photovoltaics: Research and Applications

Volumn 19, Issue 4, 2011, Pages 442-452

  Wheeldon, Jeffrey F ^a   Valdivia, Christopher E ^a   Walker, Alexandre W ^a   Kolhatkar, Gitanjali ^a   Jaouad, Abdelatif ^b   Turala, Artur ^b   Riel, Bruno ^c   Masson, Denis ^c   Puetz, Norbert ^c   Fafard, Simon ^c   Araè, Richard ^b   Aimez, Vincent ^b   Hall, Trevor J ^a   Hinzer, Karin ^a  

^a UNIVERSITY OF OTTAWA   (Canada)

^b UNIVERSITÉ DE SHERBROOKE   (Canada)

^c Cyrium Technologies Inc   (Canada)

Author keywords

AlGaAs; concentrated photovoltaics; GaAs; InGaP; multijunction solar cell; tunnel junctions

Indexed keywords

ALGAAS; GAAS; INGAP; MULTI JUNCTION SOLAR CELLS; PHOTOVOLTAICS;

ALUMINUM GALLIUM ARSENIDE; CONCENTRATION (PROCESS); DESIGN; GALLIUM ALLOYS; GALLIUM ARSENIDE; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING GALLIUM; SOLAR CELLS;

TUNNEL JUNCTIONS;

EID: 79955649383     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.1056     Document Type: Article

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