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Journal of Semiconductors

Volumn 34, Issue 8, 2013, Pages

Preparation of n-type semiconductor SnO2 thin films

(3) Rahal, Achour a Benramache, Said a,b Benhaoua, Boubaker a

a UNIVERSITY OF EL OUED (Algeria)

b UNIVERSITY OF BISKRA (Algeria)

Author keywords

SnO2 : F; TCO; thin film; ultrasonic spray technique

Indexed keywords

ELECTRICAL CONDUCTIVITY; FLUORINE DOPED TIN OXIDE; HEXAGONAL WURTZITE STRUCTURE; N-TYPE SEMICONDUCTORS; OPTICAL GAP ENERGIES; TCO; TIN CHLORIDE DEHYDRATE; ULTRASONIC SPRAY TECHNIQUES;

ACTIVATION ENERGY; CHLORINE COMPOUNDS; NANOCOMPOSITES; ORGANIC SOLVENTS; SEMICONDUCTING FILMS; SUBSTRATES; THIN FILMS; TIN; ULTRASONIC TESTING; ZINC SULFIDE;

FILM PREPARATION;

EID: 84883876015 PISSN: 16744926 EISSN: None Source Type: Journal
DOI: 10.1088/1674-4926/34/8/083002 Document Type: Article

Times cited : (10)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.