Fermi level influence on the adsorption at semiconductor surfaces - Ab initio simulations

Journal of Applied Physics

Volumn 114, Issue 6, 2013, Pages

  Krukowski, Stanisław ^a,b   Kempisty, Paweł ^a   Stra̧k, Paweł ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b UNIVERSITY OF WARSAW   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO SIMULATIONS; ADSORPTION ENERGIES; ATOMIC HYDROGEN; CHEMICAL ADSORPTION; P-TYPE; SEMI-CONDUCTOR SURFACES;

CHARGE TRANSFER; CHEMICAL ANALYSIS; ELECTRIC FIELDS; FERMI LEVEL; GALLIUM NITRIDE; HYDROGEN; SEMICONDUCTOR DOPING; SILICON CARBIDE;

GAS ADSORPTION;

EID: 84883316839     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4817903     Document Type: Article

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