Erratum: Ab initio studies of electronic properties of bare GaN(0001) surface (Journal of Applied Physics (2009) 106 (054901))

Journal of Applied Physics

Volumn 111, Issue 10, 2012, Pages

  Kempisty, Pawel ^a   Strak, Pawel ^a   Krukowski, Stanislaw ^a,b   Sakowski, Konrad ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b UNIVERSITY OF WARSAW   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84862120367     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4724337     Document Type: Erratum

References (4)

1. G. Kresse, M. Marsman, and J. Furthmüller, VASP the Guide (Computational Physics, Faculty of Physics, Universität Wien, Wien, 2011), http://cms.mpi.univie.ac.at/vasp/vasp/LOCPOT-file.html.
2. E. Artacho, J.M. Cela, J. D. Gale, A. Garcia, J. Junquera, R. M. Martin, P. Ordejon, D. Sanchez-Portal, and J. M. Soler, Users Guide Siesta 3.0-rc2 (Fundación General Universidad Autónoma de Madrid, Madrid 1996-2011), http://www.uam.es/siesta.
3. See http://accelrys.com/products/materials-studio/ for Materials Studio Overview.
4. P. Kempisty, P. Strak, S. Krukowski, and K. Sakowski, J. Appl. Phys. 106, 054901 (2009). 10.1063/1.3204965