Lithographically patterned thin activated carbon films as a new technology platform for on-chip devices

ACS Nano

Volumn 7, Issue 8, 2013, Pages 6498-6506

  Wei, Lu ^a,b   Nitta, Naoki ^a   Yushin, Gleb ^a  

^a Georgia Institute of Technology   (United States)

^b NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

Author keywords

double layer; electrodes; on chip; supercapacitors; ultracapacitors

Indexed keywords

CHARGE-DISCHARGE TESTS; DOUBLE LAYERS; ELECTRICAL DOUBLE-LAYER CAPACITOR; GALVANOSTATIC CHARGE DISCHARGES; HIGH CURRENT DENSITIES; ON CHIPS; SUPER CAPACITOR; ULTRACAPACITORS;

ACTIVATED CARBON; CAPACITANCE; CYCLIC VOLTAMMETRY; ELECTROCHEMICAL ELECTRODES; ELECTRODES; ELECTROLYTIC CAPACITORS; LITHIUM COMPOUNDS; SILICON WAFERS; SURFACE DEFECTS;

CARBON FILMS;

CARBON; SILICON; SUCROSE;

ADSORPTION; CHEMISTRY; DEVICES; ELECTRIC CAPACITANCE; ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; ELECTRODE; MATERIALS TESTING; MICROCHIP ANALYSIS; NANOTECHNOLOGY; POROSITY; PROCEDURES; SCANNING ELECTRON MICROSCOPY; SURFACE PROPERTY; TEMPERATURE; TIME; ARTICLE; EQUIPMENT; METHODOLOGY;

ADSORPTION; CARBON; ELECTRIC CAPACITANCE; ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; ELECTRODES; EQUIPMENT AND SUPPLIES; MATERIALS TESTING; MICROCHIP ANALYTICAL PROCEDURES; MICROSCOPY, ELECTRON, SCANNING; NANOTECHNOLOGY; POROSITY; SILICON; SUCROSE; SURFACE PROPERTIES; TEMPERATURE; TIME FACTORS;

EID: 84883260273     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn4028129     Document Type: Article

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