Role of ion beam induced solid flow in surface patterning of Si (1 0 0) using Ar ion beam irradiation

Applied Surface Science

Volumn 283, Issue , 2013, Pages 417-421

  Kumar, Tanuj ^a   Kumar, Ashish ^b   Lalla, N P ^c   Hooda, Sonu ^a   Ojha, Sunil ^a   Verma, Shammi ^a   Kanjilal, D ^a  

^a INTER UNIVERSITY ACCELERATOR CENTRE   (India)

^b INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

^c UGC DAE CONSORTIUM FOR SCIENTIFIC RESEARCH   (India)

Author keywords

AFM; Raman; Ripple; Solid flow; TEM

Indexed keywords

ATOMIC FORCE MICROSCOPY; BACKSCATTERING; FLOW OF SOLIDS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; ION BEAMS; ION BOMBARDMENT; TRANSMISSION ELECTRON MICROSCOPY;

CROSS SECTIONAL AREA; CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; INCOMPRESSIBLE SOLIDS; ION BEAM IRRADIATION; MICRO-RAMAN INVESTIGATIONS; RAMAN; RIPPLE; RUTHERFORD BACK-SCATTERING;

AMORPHOUS SILICON;

EID: 84883176837     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2013.06.124     Document Type: Article

References (19)

1. D. Whang, S. Jin, Y. Wu, and C.M. Lieber Large-scale hierarchical organization of nanowire arrays for integrated nanosystems Nano Letters 3 2003 1255 1259
2. J.R. Lindner, M.L. Kahn, S.R. Coughlin, G.R. Sambrano, E. Schauble, D. Bernstein, D. Foy, A. Hafezi-Moghadam, and K. Ley Delayed onset of inflammation in protease-activated receptor-2-deficient mice Journal of Immunology 165 2000 6504 6510
3. S. Facsko, T. Dekorsy, C. Koerdt, C. Trappe, H. Kurz, A. Vogt, and H.L. Hartnagel Formation of ordered nanoscale semiconductor dots by ion sputtering Science 285 1999 1551 1553
4. R. Gago, L. Vázquez, R. Cuerno, M. Varela, C. Ballesteros, and J.M. Albella Production of ordered silicon nanocrystals by low-energy ion sputtering Applied Physics Letters 78 2001 3316 3318
5. M. Navez, D. Chaperot, and C. Sella Microscopie electronique - etude de lattaque du verre par bombardement ionique Comptes rendus hebdomadaires des séances de l'Académie des sciences 254 1962 240
6. R.M. Bradley, and J.M.E. Harper Theory of ripple topography induced by ion bombardment Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films 6 1988 2390 2395
7. P. Alkemade Propulsion of ripples on glass by ion bombardment Physical Review Letters 96 2006 107602
8. J. Kim, D.G. Cahill, and R. Averback Surface morphology of Ge (111) during etching by keV ions Physical Review B 67 2003 045404
9. W.L. Chan, and E. Chason Making waves: kinetic processes controlling surface evolution during low energy ion sputtering Journal of Applied Physics 101 2007 121301-121301-121346
10. C.S. Madi, E. Anzenberg, K.F. Ludwig Jr., and M.J. Aziz Mass redistribution causes the structural richness of ion-irradiated surfaces Physical Review Letters 106 2011 66101
11. S.A. Norris, J. Samela, L. Bukonte, M. Backman, F. Djurabekova, K. Nordlund, C.S. Madi, M.P. Brenner, and M.J. Aziz Molecular dynamics of single-particle impacts predicts phase diagrams for large scale pattern formation Nature communications 2 2011 276
12. M. Castro, and R. Cuerno Hydrodynamic approach to surface pattern formation by ion beams Applied Surface Science 258 2012 4171 4178
13. M. Castro, R. Gago, L. Vázquez, J. Muñoz-García, and R. Cuerno Stress-induced solid flow drives surface nanopatterning of silicon by ion-beam irradiation Physical Review B 86 2012 214107
14. S.A. Norris Stress-induced patterns in ion-irradiated Silicon: a model based on anisotropic plastic flow 2012 arXiv:1207.5754 (arXiv preprint)
15. T. Chini, F. Okuyama, M. Tanemura, and K. Nordlund Structural investigation of keV Ar-ion-induced surface ripples in Si by cross-sectional transmission electron microscopy Physical Review B 67 2003 205403
16. R. Cuerno, M. Castro, J. Munoz-Garcia, R. Gago, and L. Vazquez Nanoscale pattern formation at surfaces under ion-beam sputtering: A perspective from continuum models Nuclear Instruments and Methods in Physics Research Section B 269 2011 894 900
17. R. Braunstein, A.R. Moore, and F. Herman Intrinsic optical absorption in germanium-silicon alloys Physical Review 109 1958 695 710
18. S.M. Sze, and K.K. Ng Physics of semiconductor devices 2006 Wiley-interscience
19. T. Chini, D. Datta, U. Luchhesi, and A. Mücklich Photoluminescence from Si: effect of ripple microstructures induced by argon ion irradiation Surface and Coatings Technology 203 2009 2690 2693