Characteristics of Ga-doped ZnO films deposited by pulsed DC magnetron sputtering at low temperature

Materials Science in Semiconductor Processing

Volumn 16, Issue 6, 2013, Pages 1957-1963

  Ahn, Kyung Jun ^a   Lee, Sanghun ^b   Kim, Won Jeong ^b   Yeom, Geun Young ^a   Lee, Woong ^b  

^a Sungkyunkwan University   (South Korea)

^b Changwon National University   (South Korea)

Author keywords

Absorption spectra; Pulsed DC magnetron sputtering; Transparent conductive oxide; X ray photoelectron spectroscopy; ZnO Ga doping

Indexed keywords

ABSORPTION BEHAVIORS; DOPING EFFICIENCY; GADOPED ZNO (GZO); LOW TEMPERATURES; PULSED DC MAGNETRON SPUTTERING; TRANSPARENT CONDUCTIVE OXIDE FILMS; TRANSPARENT CONDUCTIVE OXIDES; ZNO;

ABSORPTION SPECTRA; ELECTROMAGNETIC WAVE ABSORPTION; MAGNETRON SPUTTERING; METALLIC COMPOUNDS; OXIDE FILMS; PHOTOELECTRONS; SEMICONDUCTOR DOPING; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

GALLIUM;

EID: 84882363046     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2013.07.026     Document Type: Article

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