All-solid-state electric-double-layer transistor based on oxide ion migration in Gd-doped CeO2 on SrTiO3 single crystal

Applied Physics Letters

Volumn 103, Issue 7, 2013, Pages

  Tsuchiya, Takashi ^a   Terabe, Kazuya ^a   Aono, Masakazu ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

A-ORDER; AC IMPEDANCE SPECTROSCOPY; ALL-SOLID-STATE; ELECTROSTATIC CARRIER DOPING; INSULATOR STRUCTURE; OXIDE ION CONDUCTORS; OXIDE IONS; ROOM TEMPERATURE;

IONS;

ELECTROCHEMICAL ELECTRODES;

EID: 84882351696     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4818736     Document Type: Article

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