High thermoelectric performance by resonant dopant indium in nanostructured SnTe

Proceedings of the National Academy of Sciences of the United States of America

Volumn 110, Issue 33, 2013, Pages 13261-13266

  Zhang, Qian ^a   Liao, Bolin ^b   Lan, Yucheng ^a   Lukas, Kevin ^c   Liu, Weishu ^a   Esfarjani, Keivan ^b   Opeil, Cyril ^c   Broido, David ^c   Chen, Gang ^b   Ren, Zhifeng ^a  

^a University of Houston   (United States)

^b Massachusetts Institute of Technology   (United States)

^c BOSTON COLLEGE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM; NANOMATERIAL;

ARTICLE; CONCENTRATION (PARAMETERS); ELECTRIC CONDUCTIVITY; ENERGY RECOVERY; GRAIN; HIGH TEMPERATURE; PRIORITY JOURNAL; SIMULATION; SOLID STATE; THERMAL CONDUCTIVITY;

ELECTRIC CONDUCTIVITY; IRIDIUM; MATERIALS TESTING; MICROSCOPY, ELECTRON, SCANNING; MODELS, CHEMICAL; NANOSTRUCTURES; TELLURIUM; TEMPERATURE; TIN COMPOUNDS; X-RAY DIFFRACTION;

EID: 84882350570     PISSN: 00278424     EISSN: 10916490     Source Type: Journal    
DOI: 10.1073/pnas.1305735110     Document Type: Article

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