SCOPUS 정보 검색 플랫폼

Volumn 5, Issue 17, 2013, Pages 8037-8044

The direct magnetoelectric effect in ferroelectric-ferromagnetic epitaxial heterostructures

(10) Fina, I a Dix, N a Rebled, J M a,b Gemeiner, P c Marti X d Peiro F b Dkhil, B c Sanchez F a Fabrega L a Fontcuberta, J a

a INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA ICMAB CSIC (Spain)

b UNIVERSITY OF BARCELONA (Spain)

c LABORATOIRE STRUCTURES (France)

d CHARLES UNIVERSITY (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PERMITTIVITIES; EPITAXIAL HETEROSTRUCTURES; FERROELECTRIC LAYERS; FERROELECTRIC POLARIZATION; FERROMAGNETIC LAYERS; FREE CARRIER DENSITY; MAGNETOELECTRIC COUPLINGS; STRUCTURAL TRANSITIONS;

EPITAXIAL GROWTH; FERROELECTRIC MATERIALS; FERROELECTRIC THIN FILMS; FERROELECTRICITY; FERROMAGNETIC MATERIALS; FERROMAGNETISM; INTERFACES (MATERIALS); MAGNETIC FIELDS; MAGNETOELECTRIC EFFECTS; METALLIC COMPOUNDS; PERMITTIVITY; SUBSTRATES;

FERROELECTRIC FILMS;

EID: 84881516692 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c3nr01011b Document Type: Article

Times cited : (55)

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