Growth of silicon nanowires by sputtering and evaporation methods

Physica Status Solidi (A) Applications and Materials Science

Volumn 210, Issue 7, 2013, Pages 1429-1432

  Nguyen, Tu ^a   Nguyen, Thuy Thi ^a   Vuong, Anh Xuan ^a   Mai, Luan Duc ^a   Nguyen, Tuan Hoang ^a   Nguyen, Chien Duc ^a   Nguyen, Lam Huu ^a  

^a HANOI UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Viet Nam)

Author keywords

nanowires; photoluminescence; silicon; sputtering; thermal evaporation

Indexed keywords

AU THIN LAYERS; EVAPORATION METHOD; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; HIGH TEMPERATURE; PHOTOLUMINESCENCE MEASUREMENTS; QUANTUM CONFINEMENT EFFECTS; SILICON NANOWIRES; THERMAL EVAPORATION METHOD;

FIELD EMISSION MICROSCOPES; GOLD; GOLD DEPOSITS; NANOWIRES; PHASE TRANSITIONS; PHOTOLUMINESCENCE; SPUTTERING; THERMAL EVAPORATION;

SILICON;

EID: 84881379674     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201228730     Document Type: Article

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