Morphology of Si nanowires synthesized by high-temperature laser ablation

Journal of Applied Physics

Volumn 85, Issue 11, 1999, Pages 7981-7983

  Tang, Y H ^a   Zhang, Y F ^a   Wang, N ^a   Lee, C S ^a   Han, X D ^a   Bello, I ^a   Lee, S T ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTAL WHISKERS; HIGH TEMPERATURE EFFECTS; LASER ABLATION; MORPHOLOGY; NUCLEATION; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY;

NANOWIRES;

NANOSTRUCTURED MATERIALS;

EID: 0032614008     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369389     Document Type: Article

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