Morphological, electrical and optical properties of highly oriented undoped and doped zinc oxide and cadmium oxide films grown by atmospheric-pressure chemical vapor deposition

Surface and Coatings Technology

Volumn 230, Issue , 2013, Pages 245-253

  Terasako, Tomoaki ^a   Ogura, Yoshinori ^a   Ohmae, Ken ^a   Fujimoto, Shohei ^a   Yagi, Masakazu ^b   Shirakata, Sho ^a  

^a EHIME UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

CdO; CVD; Hall mobility; Photoluminescence; Transmittance; ZnO

Indexed keywords

CDO; ELECTRICAL AND OPTICAL PROPERTIES; HYDROGEN-RELATED DONORS; PHOTOLUMINESCENCE EXCITATION; STOICHIOMETRIC COMPOSITIONS; TRANSMITTANCE; TRANSMITTANCE SPECTRA; ZNO;

ALUMINUM; CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; ELECTRIC FIELDS; ELECTRIC PROPERTIES; GALLIUM; GALLIUM ALLOYS; HALL MOBILITY; METALLIC FILMS; OPTICAL PROPERTIES; OXIDE FILMS; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTOR QUANTUM WELLS; ZINC OXIDE;

SEMICONDUCTOR DOPING;

EID: 84881317429     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2013.06.015     Document Type: Article

References (30)

1. Özgür Ü., Aliviv Ya.I., Lin C., Teke A., Rescchikov M.A., Dogan S., Avrutin V., Cho S.-J., Morkoç H. J. Appl. Phys. 2005, 98:041301.
2. Saha B., Das S., Chattopadhyay K.K. Sol. Energy Mater. Sol. Cells 2007, 91:1692.
3. Yan M., Lane M., Kannewuf R., Chang R.P.H. Appl. Phys. Lett. 2001, 78:2342.
4. Nakamura A., Ohashi T., Yamamoto K., Ishihara J., Aoki T., Temmyo J., Gotoh H. Appl. Phys. Lett. 2007, 90:93512.
5. Makino T., Ohtomo A., Chia C.H., Segawa Y., Koinuma H., Kawasaki M. Phys. E. 2004, 21:671.
6. Terasako T., Shigematsu Y., Hiji M., Yamaguchi M.T., Shirakata S. J. Vac. Sci. Technol. B 2009, 27:1646.
7. Terasako T., Fujiwara T., Nakata Y., Yagi M., Shirakata S. Thin Solid Films 2013, 528:237.
8. Terasako T., Yagi M., Ishizaki M., Senda Y., Matsuura H., Shirakata S. Thin Solid Films 2007, 516:159.
9. Zhang S.B., Wei S.-H., Zunger A. Phys. Rev. B 2001, 63:075205.
10. Van der Walle C.G. Phys. Rev. Lett. 2000, 85:1012.
11. Terasako T., Song H., Makino H., Shirakata S., Yamamoto T. Thin Solid Films 2013, 528:19.
12. Chattopadhyay D., Queisser H.J. Rev. Mod. Phys. 1981, 53:745.
13. Kang T.D., Lee H., Park W.I., Yi G.C. Thin Solid Films 2004, 455-456:609.
14. Boemare C., Monteiro T., Soares M.J., Guilherme J.G., Alves E. Physica B 2001, 308-310:985.
15. Reynolds D.C., Look D.C., Jogai B., Litton C.W., Collins T.C., Harsch W., Cantwell G. Phys. Rev. B 1998, 57:12151.
16. Teke A., Özgür Ü., Doǧan S., Gu X., Morkoç H., Nemeth B., Nause J., Everitt H.O. Phys. Rev. B 2004, 70:195207.
17. Shirra M., Schneider R., Reiser A., Prinz G.M., Feneberg M., Biskupek J., Kaiser U., Krill C.E., Sauer R., Thonke K. Physica B 2007, 401-402:362.
18. Wang L., Giles N.C. J. Appl. Phys. 2003, 94:973.
19. Alves H., Pfistere D., Zeuner A., Riemann T., Christen J., Hofmann D.M., Meyer B.K. Opt. Mater. 2003, 23:33.
20. Rosenwaig A. Phys. Today 1975, 28:23.
21. Kato H., Sano M., Miyamoto K., Yao T. J. Cryst. Growth 2002, 237-239:538.
22. Klingshirn C.F. Semicondutor Optics 1995, Springer-Verlag, Berlin, p. 241.
23. Meyer B.K., Sann J., Hofmann D.M., Neumann C., Zeuner A. Semicond. Sci. Technol. 2005, 20:S62.
24. Hanamura E. J. Phys. Soc. Jpn. 1970, 28:110.
25. Yu P., Cardona M. Fundamentals of Semiconductors - Physics and Materials Properties 1996, Springer-Verlag, Berlin, p. 258.
26. Zhu Y., Mendelsberg R.J., Zhu J., Han J., Anders A. J. Phys. D: Appl. Phys. 2013, 46:195102.
27. Yu K.M., Mayer M.A., Speaks D.T., He H., Zhao R., Hsu L., Mao S.S., Haller E.E., Walukiewicz W. J. Appl. Phys. 2012, 111:123505.
28. Köhler H. Solid State Commun. 1972, 11:1687.
29. Santos-Cruz J., Toress-Delgado G., Castanedo-Perez R., Jiménez-Sandoval S., Jiménez-Sandoval O., Zúñiga-Romero C.I., Márquez Marín J., Zelaya-Angel O. Thin Solid Films 2005, 493:83.
30. Dan£uş C., Rusu G.G., Dobromir M., Rusu M. Appl. Surf. Sci. 2008, 255:2665.