Separating failure modes in power cycling tests

2012 7th International Conference on Integrated Power Electronics Systems, CIPS 2012

Volumn , Issue , 2012, Pages

  Schmidt, Ralf ^a   Scheuermann, Uwe ^a  

^a Semikron Elektronik GmbH AndCo KG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

END-OF-LIFE; JUNCTION TEMPERATURES; KEY FACTORS; LIFETIME MODELS; NUMBER OF CYCLES TO FAILURE; POWER CYCLING; SOLDER FATIGUE; SOLDER JOINTS;

ELECTRONICS PACKAGING; SEPARATION; SILVER; SINTERING;

FAILURE MODES;

EID: 84881107070     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. M.Held, P.Jacob, G.Nicoletti, P.Scacco, M.H.Poech, Fast Power Cycling Test for IGBT Modules in Traction Application, Proc. Power Electronics and Drive Systems, 1997, 425-430.
2. R.Bayerer, T.Herrmann, T.Licht, J.Lutz, M.Feller: Model for Power Cycling Lifetime of IGBT Modules-various factors influencing lifetime, Proc. CIPS 2008, 37-42.
3. U.Scheuermann, P.Wiedl: Low temperature joining technology-A high reliability alternative to solder contacts, Workshop on Metal Ceramic Composites for Functional Applications, 181-192, Wien, 1997.
4. S.Ramminger, N.Seliger, G.Wachutka: Reliability Model for Al Wire Bonds Subjected to Heel Crack Failures, Microelectronics Reliability 40 (2000), 1521-1525.
5. U.Scheuermann, S.Schuler: Power cycling results for different control strategies, Microelectronics Reliability 50, 2010, 1203-1209.
6. P.Beckedahl, M.Hermann, M.Kind, M.Knebel, J.Nascimento, A.Wintrich: Performance comparison of traditional packaging technologies to a novel bond wire-less all sintered power module, Proceedings of PCIM Europe, 2011, 247-252
7. D.Siepe, R.Bayerer, R.Roth, The future of wire bonding is? Wire bonding, Proceedings of CIPS 2010, paper 3.7
8. J.Due, S.Munk-Nielsen, R.Nielsen; Lifetime investigation of high power IGBT, Proceedings of EPE2011, Birmingham, UK
9. J.Goehre, M.Schneider-Ramelow, K.-D.Lang, U.Geibler; Interface Degradation of Al Heavy Wire Bonds on Power Semiconductors during Active Power Cycling Measured by the Shear Test, Proc. CIPS 2010, 97-102.